| PART |
Description |
Maker |
| FD1000FX-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| 2SC4854 2SC4854-5 2SC4854-4 |
晶体管|晶体管|叩| 6V的五（巴西）总裁| 15mA的一c）|36AB
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
Low-Voltage Low-Current High-Frequency Amp Applications
Low-Voltage, Low-Current High-Frequency Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC1722 |
LOW FREQUENCY HIGH VOLTAHE POWER AMPLIFIER TV POWER SUPPLY DRIVER
LOW FREQUENCY POWER AMPLIFIER TV HORIZONTAL/VERTICAL DRIV
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| 2SC5434 2SC5434-T1 |
Reduced noise high frequency amplification transistor
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
|
NEC[NEC]
NEC Corp.
|
| EKE |
Aluminum Electrolytic Capacitors, Radial Style, Long Lifetime, High AC Rating, Polarized AI Electrolytic Capacitor, High C-U Product, Small Dimensions, Low Impedance over High Temperature and Frequency Ranges
|
Vishay
|
| 2SD2211 |
High breakdown voltage Low collector output capacitance High transition frequency
|
TY Semiconductor Co., L...
|
| 2SC1723 |
LOW FREQUENCY HIGH VOLTAHE POWER AMPLIFIER TV POWER SUPPLY DRIVER
From old datasheet system
|
Unknow
List of Unclassifed Manufacturers
ETC
Electronic Theatre Controls, Inc.
|
| KSD288 KSD288YTU KSD288Y |
Power Regulator Low Frequency High Power Amplifier
NPN Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| MRG2130 |
Transmission cable is used for low and high power radio frequency connections
|
List of Unclassifed Man...
|
| 2SD758 2SD757 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB717 and 2SB718
From old datasheet system
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A
|
Hitachi Semiconductor
|
| 2SD1591 |
Audio Frequency Power Amplifier and Low Speed High Current Switching Industrial Use
|
List of Unclassifed Manufacturers
ETC[ETC]
|
